| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFD3055LE | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
RFD3055LE | 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | |
RFD3055LE | N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
RFD3055LE | N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | |
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | ||
N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS Harris Corporation | HARRIS | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS Harris Corporation | HARRIS | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | Intersil Intersil Corporation | Intersil | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato | Intersil Intersil Corporation | Intersil |
詳細(xì)參數(shù)
- 型號：
RFD3055LE
- 功能描述：
MOSFET TO-251AA N-Ch Power
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO251 |
8950 |
BOM配單專家,發(fā)貨快,價格低 |
詢價 | ||
onsemi |
24+ |
I-PAK |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
FAIRCHILD |
TO-251 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
ON |
21+ |
TO-251AA |
7500 |
詢價 | |||
ON/安森美 |
24+ |
TO-252 |
505348 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
24+ |
N/A |
4100 |
詢價 | ||||
FAIRCHI |
2020+ |
TO-352 |
40 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
Fairchild |
23+ |
I-PAK(TO-251AA) |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
FSC |
23+ |
RFD3055LE |
13528 |
振宏微原裝正品,假一罰百 |
詢價 |
相關(guān)規(guī)格書
更多- RFD3055LESM
- RFD90101
- RFD90103
- RFD90105
- RFDIP1608060L0T
- RFDIP2012050L7T
- RFDIP2520080TM0T62
- RFDPA151300SBLB8G1
- RFDPA171300SBAB8G1
- RFDPA391300SBAB8G1
- RFDPA870900SBLB8G1
- RFE100024Y
- RFE1000-32-Y
- RFE160012
- RFE160048
- RFG3DSMY
- RF-HDT-DVBB-N2
- RFI155-1
- RFI155-2
- RFI25-1
- RFI25-4-D2
- RFI375-1
- RFI45-12-D3
- RFI45-16-D2
- RFI75-12-D2
- RFI75-13-D2
- RFI75-14-D3
- RFI75-2-D2
- RFI75-2-D5
- RFI75-4-D2
- RFI75-6
- RFI77-6
- RFI95-14
- RFID125-ISO-5
- RFID125-STI-5
- RFIDTAGBAG
- RFL6
- RFLABKIT-001
- RFLPF2012090K0T
- RFM03U3CT(TE12L)
- RFM12U7X(TE12L,Q)
- RFM67W-433S2
- RFM68W-433-S2
- RFN10B3STL
- RFN1L7STE25
相關(guān)庫存
更多- RFD3055LESM9A
- RFD90102
- RFD90104
- RFDA0057
- RFDIP1608060L3T
- RFDIP2012100L3T
- RFDPA151300SBAB8G1
- RFDPA151310NNAB3G1
- RFDPA171310NNAB3G1
- RFDPA870900SBAB8G1
- RFDPA870910NNAB3G1
- RFE1000-24-Y
- RFE1000-48-Y
- RFE160024
- RFECA3216060A1T
- RFG5DSMY
- RF-HDT-DVBE-N2
- RFI155-12-D4
- RFI21-13
- RFI25-12-D3
- RFI3157-7
- RFI375-2
- RFI45-13-D3
- RFI75-1
- RFI75-13
- RFI75-13-D3
- RFI75-2
- RFI75-2-D3
- RFI75-4
- RFI75-4-D3
- RFI77-2
- RFI95-13
- RFI97-13
- RFID125-KEY-5
- RFIDR-GM-366
- RFIDTAGPALLET
- RFL8
- RFLPF1608060A07B1U
- RFM01U7P(TE12L,F)
- RFM08U9X(TE12L,Q)
- RFM26W-1D28
- RFM67W-868S2
- RFM68W-868S2
- RFN1L6STE25
- RFN20NS6STL
