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RFM8P10中文資料HARRIS數(shù)據(jù)手冊PDF規(guī)格書

RFM8P10
廠商型號

RFM8P10

功能描述

-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS

文件大小

279.17 Kbytes

頁面數(shù)量

5

生產(chǎn)廠商 Harris Corporation
企業(yè)簡稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二

更新時間

2025-1-24 23:21:00

RFM8P10規(guī)格書詳情

This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? -8A, -80V and -100V

? rDS(ON) = 0.400?

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RFM8P10

  • 制造商:

    Harris Corporation

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