RJF0605DPD

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio; ? Logic level operation (4 V Gate drive).\n? Built-in the over temperature shut-down circuit.\n? High endurance capability against to the short circuit.\n? Latch type shut down operation (need 0 voltage recovery).\n? Built-in the current limitation circuit.\n? Power supply voltage applies 12 V and 2;

RJF0605DPD

Silicon N Channel MOS FET Series Power Switching

RJF0605DPD_15

Silicon N Channel MOS FET Series Power Switching

RJF0605DPD-00-J3

Silicon N Channel MOS FET Series Power Switching

RJGT102WDP8

Runjet(瑞納捷)
SOP-8

Runjet(瑞納捷)