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RM110N82T2中文資料RECTRON數(shù)據(jù)手冊(cè)PDF規(guī)格書

RM110N82T2
廠商型號(hào)

RM110N82T2

功能描述

N-Channel Enhancement Mode Power MOSFET

絲印標(biāo)識(shí)

110N82

封裝外殼

TO-220-3L

文件大小

286.13 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Rectron Semiconductor
企業(yè)簡(jiǎn)稱

RECTRON

中文名稱

Rectron Semiconductor官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-10 15:03:00

RM110N82T2規(guī)格書詳情

Description

The RM110N82T2 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

VDS = 82V,ID =110A

RDS(ON) < 7mΩ @ VGS=10V (Typ:5.9mΩ)

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Application

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply

Halogen-free

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