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RMQCEA3618DGBA中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
RMQCEA3618DGBA |
| 功能描述 | 36-Mbit DDR? II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT |
| 文件大小 |
416.34 Kbytes |
| 頁面數(shù)量 |
31 頁 |
| 生產(chǎn)廠商 | Renesas Technology Corp |
| 企業(yè)簡稱 |
RENESAS【瑞薩】 |
| 中文名稱 | 瑞薩科技有限公司官網(wǎng) |
| 原廠標識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-5-28 18:02:00 |
| 人工找貨 | RMQCEA3618DGBA價格和庫存，歡迎聯(lián)系客服免費人工找貨 |
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Description
The RMQCEA3636DGBA is a 1,048,576-word by 36-bit and the RMQCEA3618DGBA is a 2,097,152-word by 18-bit
synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are
controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are
suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit
configuration. These products are packaged in 165-pin plastic FBGA package.
Features
- Power Supply
- 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
