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TPCP8511

BipolarTransistorsSiliconNPNEpitaxialType

Applications ?High-SpeedSwitching ?DC-DCConverters ?PhotoFlashes Features (1)HighDCcurrentgain:hFE=250to400(IC=0.3A) (2)Lowcollector-emittersaturation:VCE(sat)=0.18V(max)(IB=33mA) (3)High-speedswitching:tf=38ns(typ.)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

UM8511

8LineESD/EMIProtectionsforColorLCDInterfaces

UNIONSEMIUnion Semiconductor, Inc.

英聯(lián)英聯(lián)半導體股份有限公司

UM8511

Multi-lineESD/EMIProtectionsforSignalLines

UNIONSEMIUnion Semiconductor, Inc.

英聯(lián)英聯(lián)半導體股份有限公司

V8511W

ASS0868HS

ASSMANN

ASSMANN WSW COMPONENTS

V8511X

ASS0868HS

ASSMANN

ASSMANN WSW COMPONENTS

V8511Y

ASS0868HS

ASSMANN

ASSMANN WSW COMPONENTS

XCSE8511

metalsafetyswitchXCSE-3NC-slowbreak-2entriestappedPg13-24V

SCHNEIDERSchneider Electric

施耐德施耐德電氣

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