首頁 >RT8933GQW>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
50VCERAMICDISC | NTE NTE Electronics | NTE | ||
AdvancedPMUforCoreLogicLUCY | ACTIVE-SEMIActive-Semi, Inc 技領(lǐng)半導(dǎo)體技領(lǐng)半導(dǎo)體（上海）有限公司 | ACTIVE-SEMI | ||
AdvancedPMUforCoreLogicLUCY | ACTIVE-SEMIActive-Semi, Inc 技領(lǐng)半導(dǎo)體技領(lǐng)半導(dǎo)體（上海）有限公司 | ACTIVE-SEMI | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES ■-20V,-4.3A,RDS(ON)=90mΩ@VGS=-4.5V. RDS(ON)=140mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfaceMountPackage. | CETChino-Excel Technology 華瑞華瑞股份有限公司 | CET | ||
DualP-ChannelEnhancementModeFieldEffectTransistor VOLTAGE20VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SO-8) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. *Leadfreeproductisacquired. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchi | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
General-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
CWLASERDIODES CWLASERDIODES Highopticalpowerfromasinglechip FEATURES ●Highopticalpower&highradiantfluxdensity(CW) L8933series:0.5W/50μm L8446series:1W/100μm L8763series:1W/50μm L8828series:2W/100μm ●Highstability ●Longlife ●Compact | HAMAMATSUHamamatsu Photonics Co.,Ltd. 濱松光子濱松光子學(xué)株式會社 | HAMAMATSU | ||
InGaAsAVALANCHEPHOTODIODES DESCRIPTION PD8XX3seriesareInGaAsavalanchephotodiodewhichhasasensitiveareaofφ35μm,PD8XX3issuitableforreceivingthelighthavingawavelengthbandof1000to1600nm.Thisphotodiodefeatureslownoise,ahighquantumefficiencyandahighspeedresponseissuitableforthelight | MitsubishiMitsubishi Electric Semiconductor 三菱電機(jī)三菱電機(jī)株式會社 | Mitsubishi | ||
Rail-to-RailOutputOperationalAmplifiers | SGMICROSG Micro Corp 圣邦股份圣邦微電子（北京）股份有限公司 | SGMICRO |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
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