首頁 >RT9011-SSPQWC>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
PortablePowerManagement300mADualLDORegulator GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features ?WideOperatingVoltageRanges:2.5Vto5.5V ?Low-NoiseforRFApplica | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator GeneralDescription TheRT9011isadualchannel,lownoise,andlowdropoutregulatorsourcingupto300mAateachchannel.Therangeofoutputvoltageisfrom1.2Vto3.6Vbyoperatingfrom2.5Vto5.5Vinput. Features ?WideOperatingVoltageRanges:2.5Vto5.5V ?Low-NoiseforRFApplica | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
PortablePowerManagement300mADualLDORegulator | RichTekRichtek Technology Corporation 立锜科技立锜科技股份有限公司 | RichTek | ||
Powerdissipation FEATURE Powerdissipation PCM:0.2W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
TRANSISTOR竊?NPN竊 TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 長電科技江蘇長電科技股份有限公司 | JIANGSU | ||
TO-92Plastic-EncapsulateTransistors TRANSISTOR（NPN） FEATURE Powerdissipation PCM:0.31W（Tamb=25℃） Collectorcurrent ICM:0.03A Collector-basevoltage V(BR)CBO:30V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | DAYADaya Electric Group Co., Ltd. 大亞電器集團(tuán)大亞電器集團(tuán)有限公司 | DAYA | ||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor | BILINGalaxy Semi-Conductor Holdings Limited 銀河微電常州銀河世紀(jì)微電子股份有限公司 | BILIN | ||
SILICONEPITAXIALPLANARTRANSISTOR Features ?CollectorCurrent.(IC=30mA） ?Powerdissipation.(PC=200mW) MechanicalData ?Case:SOT-23,MoldedPlastic ?Terminals:SolderableperMIL-STD-202,Method208 ?Polarity:SeeDiagrams ?Approx.Weight:0.008grams | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●CollectorCurrent.(IC=30mA） ●Powerdissipation.(PC=200mW) APPLICATIONS ●AMconverter,AM/FMifamplifiergeneralpurposetransistor | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司 | LUGUANG |
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