首頁(yè) >SCLB-P-F-DPDT-C-110V>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiCSchottkyBarrierDiodes | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiCSchottkyBarrierDiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
PartNo.Explanation | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiCSchottkyBarrierDiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiCSchottkyBarrierDiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiCSchottkyBarrierDiode | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
IntelIndustrialSolutionsSystemConsolidationSeries ProductOverview Agrowingtrendinindustrialautomationistousevirtualizationtechnologytocombinewhatwerepreviouslydiscretesubsystemsintoasinglesystem.TheIntel?IndustrialSolutionsSystemConsolidationSeriesgreatlysimplifiesthiseffortbypre-integratingkeysoftwareandha | IntelIntel Corporation 英特爾 | Intel | ||
SiCSchottkyBarrierDiode Features 3)High-speedswitchingpossible 2)Reducedtemperaturedependence 1)Shorterrecoverytime | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
SiCSchottkyBarrierDiode Features 1)Shorterrecoverytime 2)Reducedtemperaturedependence 3)High-speedswitchingpossible Construction Siliconcarbideepitaxialplanertype | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
GlassPassivatedJunctionZenerVoltageRegulator1.0WattSteadyState FEATURES ?1Wzenervoltageregulatordiodes ?PlasticpackagehasUnderwritersLaboratoryFlammability Classification94V-0 ?Guardingforovervoltageprotection ?Idealforsurface-mountapplications ?Hightemperaturesolderingguaranteed:260°C/10secondsat terminals ?Wedeclaretha | LRCLeshan Radio Company 樂(lè)山無(wú)線電樂(lè)山無(wú)線電股份有限公司 | LRC |
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