SCT040H120G3AG

絲印：SCT40H12G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H2PAK-7 package

Features ?AEC-Q101qualified ?VerylowRDS(on)overtheentiretemperaturerange ?Highspeedswitchingperformances ?Veryfastandrobustintrinsicbodydiode ?Sourcesensingpinforincreasedefficiency Applications ?Maininverter(electrictraction) ?DC/DCconverterforEV/HEV

SCT040H120G3AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application p; ? AEC-Q101 qualified \n? Very low RDS(on) over the entire temperature range \n? High speed switching performances \n? Very fast and robust intrinsic body diode \n? Source sensing pin for increased efficiency;

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