零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SFH425 | GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | |
SFH425 | GaAs Infrared Emitter in SMT Package | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | |
High Power Infrared Emitter (850 nm) Features: ?Highforwardcurrentallowedathightemperature ?HighPowerInfraredLED ?Shortswitchingtimes ?TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredI | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?DoubleStackemitter ?Shortswitchingtimes ?Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Features: ?HighPowerInfraredLED ?DoubleStackemitter ?Shortswitchingtimes ?Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?DoubleStackemitter ?Shortswitchingtimes ?Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?DoubleStackemitter ?Shortswitchingtimes ?Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?DoubleStackemitter ?Shortswitchingtimes ?Theproductqualificationtestplanisbasedontheguidelinesof AEC-Q101-REV-C,StressTestQualification forAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcame | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter (850 nm) Features ?HighPowerInfraredLED ?Peakwavelengthtyp.850nm Applications ?InfraredIlluminationforCMOScameras ?IRDataTransmission ?Opticalsensors | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Features: ?HighPowerInfraredLED ?Shortswitchingtime ?TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcameras ?IRdatatransmission ?Se | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?Shortswitchingtime ?TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcameras ?IRdatatransmission ?Se | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
High Power Infrared Emitter Features: ?HighPowerInfraredLED ?Shortswitchingtime ?TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. Applications ?InfraredIlluminationforcameras ?IRdatatransmission ?Se | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
SIDELED? High Power Infrared Emitter (850 nm) Features: —Package:clearepoxy —Qualifications:TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C, StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —Shortswitchingtimes | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
SIDELED? High Power Infrared Emitter (850 nm) Features: —Package:clearepoxy —Qualifications:TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C, StressTestQualificationforAutomotiveGradeDiscreteSemiconductors. —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —Shortswitchingtimes | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
High Power Infrared Emitter (850 nm) Features: ?HighPowerInfraredLED ?BlackcolouredTOPLED-package ?Improvedimagingcharacteristicsduetoabsorptionofsideemission ?Shortswitchingtimes ?TheproductqualificationtestplanisbasedontheguidelinesofAEC-Q101-REV-C,StressTestQualificationforAutomotiveGrade | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
TOPLED? Black High Power Infrared Emitter (850 nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
TOPLED? Black High Power Infrared Emitter (850 nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
High Power Infrared Emitter (850 nm) Features: ?InfraredLEDwithhighpoweroutput ?Peakwavelengthtyp.850nm ?BlackcolouredTOPLED-package ?Improvedimagingcharacteristicsduetoabsorptionofsideemission Applications ?Miniatureandlongdistancephotointerrupters(incombinationwithexternaloptics) ?RainSenso | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM | ||
TOPLED? Black High Power Infrared Emitter (850 nm) Features: —Package:clearepoxy —Qualifications:AEC-Q102Qualified —ESD:2kVacc.toANSI/ESDA/JEDECJS-001(HBM,Class2) —HighPowerInfraredLED —BlackcolouredTOPLED-package —Improvedimagingcharacteristicsduetoabsorptionofsideemission —Shortswitchingtimes | AMSCOams AG 艾邁斯歐司朗艾邁斯歐司朗股份公司 | AMSCO | ||
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung SafetyAdvices Dependingonthemodeofoperation,thesedevicesemithighlyconcentratednonvisible infraredlightwhichcanbehazardoustothehumaneye.Productswhichincorporatethese deviceshavetofollowthesafetyprecautionsgiveninIEC60825-1andIEC62471. Features | OSRAMOSRAM GmbH 艾邁斯歐司朗歐司朗光電半導(dǎo)體 | OSRAM |
詳細(xì)參數(shù)
- 型號:
SFH425
- 功能描述:
EMITTER IR 950NM R/A SMD
- RoHS:
否
- 類別:
光電元件 >> 紅外發(fā)射極
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
1,200
- 系列:
- 電流 - DC
- 正向(If):
100mA
- 輻射強(qiáng)度(le)最小值@正向電流:
27mW/sr @ 100mA
- 波長:
940nm
- 正向電壓:
1.6V
- 視角:
40°
- 方向:
頂視圖
- 安裝類型:
通孔
- 封裝/外殼:
徑向
- 包裝:
帶卷(TR)
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
OSRAM |
22+23+ |
SMD |
27642 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
OSRAM/歐司朗 |
1651+ |
SMD |
16544 |
假一賠十原裝現(xiàn)貨/主營光電元件/價(jià)格優(yōu)勢 |
詢價(jià) | ||
OSRAM |
20+ |
標(biāo)準(zhǔn) |
52000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
OSRAM/歐司朗 |
2021+ |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價(jià) | ||
OSRAM/歐司朗 |
21+ |
SMD |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
OSRAM/歐司朗 |
13+ |
4040() |
6950 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
OSRAM |
21+ |
SMD |
9866 |
詢價(jià) | |||
OSRAM |
SMD |
33396 |
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價(jià) | |||
OSRAM/歐司朗 |
589220 |
16余年資質(zhì) 絕對原盒原盤 更多數(shù)量 |
詢價(jià) | ||||
OSRAM/歐司朗 |
23+ |
NA/ |
1265 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) |
相關(guān)規(guī)格書
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