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SGP15N60

Short Circuit Rated IGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N60

Fast IGBT in NPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60_08

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP15N60RUF

Short Circuit Rated IGBT

GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP15N60RUFTU

包裝：管件 封裝/外殼：TO-220-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 24A 160W TO220

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

SGP15N60XKSA1

包裝：管件 封裝/外殼：TO-220-3 類(lèi)別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 31A 139W TO220-3

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology ?75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ?Shortcircuitwithstandtime–10μs ?Designedfor: -Motorcontrols -Inverter ?NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW15N60

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGW15N60RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHA15N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHA15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHB15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHF15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHF15N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912Available APPLICATI

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHFP15N60L

PowerMOSFET

FEATURES ?SuperfastBodyDiodeEliminatestheNeedfor ??ExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimpleDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity ?Lead(Pb)-freeAvai

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    SGP15N60

  • 功能描述：

    IGBT 晶體管 FAST IGBT NPT TECH 600V 15A

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INF
24+
100
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INFINEON
24+
TO-220
5000
只做原裝公司現(xiàn)貨
 詢(xún)價(jià)
infineon
2020+
TO-220
3582
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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INFINEO
1735+
TO220
6528
科恒偉業(yè)!只做原裝正品!假一賠十!
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TOS
23+
DIP
50000
全新原裝假一賠十
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INFINEON
18+
TO-220
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
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INFINEON
18+
TO-220
41200
原裝正品,現(xiàn)貨特價(jià)
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INFINEON/英飛凌
23+
PG-TO220-3
10000
公司只做原裝正品
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INFINEON/英飛凌
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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更多SGP15N60供應(yīng)商 更新時(shí)間2025-1-11 15:30:00

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