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首頁(yè)>SIGC156T60NR2C>芯片詳情
SIGC156T60NR2C_INFINEON/英飛凌_IGBT 晶體管 IGBT CHIP IN NPT TECHNOLOGY博通航睿技術(shù)
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號(hào):
SIGC156T60NR2C
- 功能描述:
IGBT 晶體管 IGBT CHIP IN NPT TECHNOLOGY
- RoHS:
否
- 制造商:
Fairchild Semiconductor
- 配置:
集電極—發(fā)射極最大電壓
- VCEO:
650 V
- 集電極—射極飽和電壓:
2.3 V
- 柵極/發(fā)射極最大電壓:
20 V 在25
- C的連續(xù)集電極電流:
150 A
- 柵極—射極漏泄電流:
400 nA
- 功率耗散:
187 W
- 封裝/箱體:
TO-247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
天津市博通航睿技術(shù)有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機(jī):
18322198211
- 詢價(jià):
- 電話:
18322198211
- 地址:
天津市南開(kāi)區(qū)科研西路12號(hào)356室
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