首頁(yè) >SM4530NQKP-TRG>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SRF4530ASeries-CommonModeChipInductors,CANbus Features Shieldedconstruction–lowradiation Bifilarwound Hightemperature AEC-Q200compliant RoHScompliant*andhalogenfree** | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
SRF4530AG-CommonModeChipInductor Features Shieldedconstruction–lowradiation Bifilarwound AEC-Q200compliant RoHScompliant*andhalogenfree** | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
N-ChannelandP-ChannelMOSFETuseadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
N&P-ChEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO251andTO252Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO251andTO252Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package. | SamhopSamHop Microelectronics Corp. 三合微科三合微科股份有限公司 | Samhop | ||
SURFACEMOUNTSILICONZENERDIODES Features CompleteVoltageRange3.6to200Volts Highpeakreversepowerdissipation Highreliability Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 | SUNMATE | ||
SURFACEMOUNTZENERDIODES FEATURES: *CompleteVoltageRange3.6to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | SYChangzhou Shunye Electronics Co.,Ltd. 順燁電子江蘇順燁電子有限公司 | SY |
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