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SPA06N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

Cool MOS??Power Transistor

CoolMOS?PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3

Cool MOS??Power Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3_08

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA06N80C3_11

CoolMOSTM Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?Fullyisolatedpackage(250

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO252 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPD06N80C3

N-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.9? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    SPA06N80C3

  • 功能描述:

    MOSFET MOSFET N-Channel

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
22+
sot
6600
正品渠道現(xiàn)貨,終端可提供BOM表配單。
詢價
INFINEON
23+
TO-220F
65400
詢價
INFINEON/英飛凌
2021+
TO-220F
18167
原裝進(jìn)口假一罰十
詢價
INFINEON
2021+
TO-220F
9450
原裝現(xiàn)貨。
詢價
INFINEON/英飛凌
24+
TO-220F
4400
只做原廠渠道 可追溯貨源
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON/英飛凌
2021+
TO-220F
12000
勤思達(dá) 只做原裝 現(xiàn)貨庫存
詢價
INFINEON/英飛凌
2021+
TO-220F
9000
原裝現(xiàn)貨,隨時歡迎詢價
詢價
INFINEON/英飛凌
24+
N/A
5000
只做正品原裝現(xiàn)貨
詢價
Infineon(英飛凌)
23+
TO220F
7548
原廠可訂貨,技術(shù)支持,直接渠道??珊灡9┖贤?/div>
詢價
更多SPA06N80C3供應(yīng)商 更新時間2025-1-25 14:02:00