首頁(yè) >SPB04N60S5>規(guī)格書列表

零件型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

SPB04N60S5

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPB04N60S5

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPB04N60S5

絲印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

SPB04N60S5

N-Channel 650V (D-S) Power MOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

VBSEMI

SPB04N60S5

500V-900V CoolMOS? N-Channel Power MOSFET

? Innovative high voltage technology\n? Worldwide best R DS(on) in TO-251 and TO-252\n? Ultra low gate charge\n? Periodic avalanche rated\n? Extreme dv/dt rated\n? Ultra low effective capacitances\n? Improved transconductance\n\n優(yōu)勢(shì):\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPB04N60S5_07

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

技術(shù)參數(shù)

  • Package?:

    D2PAK (TO-263)

  • VDS?max:

    600.0V

  • RDS (on)?max:

    950.0m?

  • Polarity?:

    N

  • ID ?max:

    4.5A

  • Ptot?max:

    50.0W

  • IDpuls?max:

    9.0A

  • VGS(th)?min?max:

    3.5V?5.5V

  • QG?:

    17.6nC?

  • Rth?:

    2.5K/W?

  • RthJC?max:

    2.5K/W

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
24+
SOT-263
17351
原裝進(jìn)口假一罰十
詢價(jià)
INFINEON/英飛凌
24+
TO263-3-2
20000
只做原廠渠道 可追溯貨源
詢價(jià)
infineon
12+
P-TO263-3-2
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
詢價(jià)
INFINEON
24+
P-TO263-3-2
8866
詢價(jià)
INFINEON
23+
TO-263
5000
原裝正品,假一罰十
詢價(jià)
INFINEON
23+
TO-263
7936
詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINE0N
23+
TO-263
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
INFINEO
18+
TO-263
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
詢價(jià)
INFINEON
2017+
TO-263
9000
原裝正品,誠(chéng)信經(jīng)營(yíng)
詢價(jià)
更多SPB04N60S5供應(yīng)商 更新時(shí)間2025-8-3 14:04:00