首頁(yè) >SPB04N60S5>規(guī)格書列表
零件型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
SPB04N60S5 | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPB04N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
SPB04N60S5 | 絲印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor ?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ||
SPB04N60S5 | N-Channel 650V (D-S) Power MOSFET FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Serverandtelecompowersupplies ?Switchmodepowersupplies(SMPS) ?Powerfactorcorrection | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | ||
SPB04N60S5 | 500V-900V CoolMOS? N-Channel Power MOSFET ? Innovative high voltage technology\n? Worldwide best R DS(on) in TO-251 and TO-252\n? Ultra low gate charge\n? Periodic avalanche rated\n? Extreme dv/dt rated\n? Ultra low effective capacitances\n? Improved transconductance\n\n優(yōu)勢(shì):\n; | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 |
技術(shù)參數(shù)
- Package?:
D2PAK (TO-263)
- VDS?max:
600.0V
- RDS (on)?max:
950.0m?
- Polarity?:
N
- ID ?max:
4.5A
- Ptot?max:
50.0W
- IDpuls?max:
9.0A
- VGS(th)?min?max:
3.5V?5.5V
- QG?:
17.6nC?
- Rth?:
2.5K/W?
- RthJC?max:
2.5K/W
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
24+ |
SOT-263 |
17351 |
原裝進(jìn)口假一罰十 |
詢價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO263-3-2 |
20000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) | ||
infineon |
12+ |
P-TO263-3-2 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
INFINEON |
24+ |
P-TO263-3-2 |
8866 |
詢價(jià) | |||
INFINEON |
23+ |
TO-263 |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON |
23+ |
TO-263 |
7936 |
詢價(jià) | |||
INFINEON |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
INFINE0N |
23+ |
TO-263 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
INFINEO |
18+ |
TO-263 |
85600 |
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票 |
詢價(jià) | ||
INFINEON |
2017+ |
TO-263 |
9000 |
原裝正品,誠(chéng)信經(jīng)營(yíng) |
詢價(jià) |
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