首頁(yè) >SPP04N80C3>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPP04N80C3 | Cool MOS??Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP04N80C3 | N-Channel MOSFET Transistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | |
SPP04N80C3 | CoolMOSTM Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPP04N80C3 | CoolMOSTM Power Transistor Features New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
CoolMOSTM Power Transistor Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTM Power Transistor Features New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Highpeakcurrentcapability ?Ultralowgatecharge ?Ultraloweffectivecapacitances ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤1.3? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchingapplicati | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Pb-freeleadplating;RoHScompliant ?Ultralowgatecharge ?Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤1.3? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號(hào):
SPP04N80C3
- 功能描述:
MOSFET COOL MOS N-CH 800V 4A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
22+ |
TO-220 |
60000 |
我司100%原裝正品現(xiàn)貨,現(xiàn)貨眾多歡迎加微信 |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
23+ |
N/A |
12000 |
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
22+ |
TO-220 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢(xún)價(jià) | ||
Infineon(英飛凌) |
23+ |
TO-220 |
7828 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+/24+ |
TO-220 |
9865 |
原裝MOS管(場(chǎng)效應(yīng)管). |
詢(xún)價(jià) | ||
INFINEON |
2024+ |
N/A |
70000 |
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng) |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
24+ |
TO220 |
5500 |
渠道現(xiàn)貨歡迎來(lái)詢(xún) |
詢(xún)價(jià) | ||
INFINEON |
23+ |
T0-220 |
7936 |
詢(xún)價(jià) | |||
INFINEON |
24+ |
原廠原封 |
6000 |
原裝進(jìn)口香港現(xiàn)貨價(jià)優(yōu) |
詢(xún)價(jià) | ||
INFINEON |
23+ |
TO220 |
7750 |
全新原裝優(yōu)勢(shì) |
詢(xún)價(jià) |
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