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SPP12N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISC

SPP12N50C3

N-Channel 650 V (D-S) MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS)

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBSEMI

SPP12N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPP12N50C3

500V-900V CoolMOS? N-Channel Power MOSFET

Replacement for 500V CoolMOS? C3 is CoolMOS? P7. \n 500V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio.\n; ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢(shì):\n? High efficiency and power density\n? Outstanding cost/per;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPP12N50C3

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPP12N50C3

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPP12N50C3_07

New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

SPP12N50C3_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

Infineon

技術(shù)參數(shù)

  • Package?：

    TO-220

  • VDS?max：

    500.0V

  • RDS (on)?max：

    380.0m?

  • Polarity?：

    N

  • ID ?max：

    11.6A

  • Ptot?max：

    125.0W

  • IDpuls?max：

    34.8A

  • VGS(th)?min?max：

    2.1V?3.9V

  • QG?：

    49.0nC?

  • Rth?：

    1.0K/W?

  • RthJC?max：

    1.0K/W

  • RthJA?max：

    62.0K/W

  • Operating Temperature?min：

    -55.0°C?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
24+
TO-220
17574
原裝進(jìn)口假一罰十
 詢價(jià)
英飛翎
17+
TO-220
31518
原裝正品 可含稅交易
 詢價(jià)
INFINEON
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
INFINEON
23+
T0-220
7936
詢價(jià)
INFINEON品牌
2016+
TO-220
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
INF
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
INF進(jìn)口原
17+
TO-220
6200
詢價(jià)
Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
INFINEON
22+
TO-220
38218
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
 詢價(jià)
更多SPP12N50C3供應(yīng)商 更新時(shí)間2025-8-3 8:36:00

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