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SPP20N60CFD

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

N-Channel MOSFET Transistor

?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.22? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPP20N60CFD

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD_05

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60CFD_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW20N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW20N60CFD

iscN-ChannelMOSFETTransistor

?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤220m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPW20N60CFD

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SSF20N60H

Highdv/dtandavalanchecapabilities

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

詳細參數(shù)

  • 型號:

    SPP20N60CFD

  • 功能描述:

    MOSFET COOL MOS N-CH 650V 20.7A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
INFINEON
23+
N-MOSFET/650V/17A/0.19Ω
872
正邁科技原裝現(xiàn)貨授權代理主營:IC電容.二三級管原裝
詢價
INFINEON/英飛凌
2021+
TO-220
17386
原裝進口假一罰十
詢價
INFINEON/英飛凌
18+
TO-220
300
進口原裝支持含稅
詢價
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
INFINEON
2024+
TO-220
32560
原裝優(yōu)勢絕對有貨
詢價
Infineon(英飛凌)
2023+
TO-220(TO-220-3)
4550
全新原裝正品
詢價
Infineon(英飛凌)
23+
TO220
12048
原廠可訂貨,技術支持,直接渠道??珊灡9┖贤?/div>
詢價
Infineon(英飛凌)
23+
TO220
16316
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊
詢價
Infineon(英飛凌)
24+
N/A
5000
只做原裝
詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
更多SPP20N60CFD供應商 更新時間2025-1-25 9:12:00