首頁 >SPW11N60CFD>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SPW11N60CFD | isc N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤440m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
SPW11N60CFD | Cool MOS??Power Transistor Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Intrinsicfast-recoverybodydiode ?Extremelowreverserecoverycharge ?Pb-freeleadplating;RoHScompliant ?Qualifiedaccordi | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
SPW11N60CFD | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
N-CHANNELDEPLETION-MODEPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
600V,11AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V,11AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
600V,11AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
600V,11AN-ChannelMOSFET GeneralDescription TheAOT11N60&AOTF11N60havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilit | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
600V,11AN-ChannelMOSFET GeneralDescription TheAOT11N60&AOTF11N60havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilit | AOSMDAlpha & Omega Semiconductors 萬國半導(dǎo)體美國萬國半導(dǎo)體 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細參數(shù)
- 型號:
SPW11N60CFD
- 功能描述:
MOSFET COOL MOS N-CH 650V 11A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-247 |
65400 |
詢價 | |||
INFINEON |
23+ |
TO247 |
6996 |
只做原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-247 |
538 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
英飛翎 |
17+ |
TO-247 |
31518 |
原裝正品 可含稅交易 |
詢價 | ||
Infineon(英飛凌) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
INFINEON |
24+ |
PG-TO247-3 |
8866 |
詢價 | |||
Infineon |
17+ |
TO-3P |
6200 |
詢價 | |||
infineo |
2020+ |
TO-3P |
480 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
Infineon |
23+ |
TO-247 |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
INFINEON |
23+ |
TO3P |
12335 |
詢價 |
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