SRVBSS26NT3G中文資料安森美半導體數(shù)據(jù)手冊PDF規(guī)格書

. . . employing the Schottky Barrier principle in a metal?to?silicon

power rectifier. Features epitaxial construction with oxide passivation

and metal overlay contact. Ideally suited for low voltage, high

frequency switching power supplies; free wheeling diodes and

polarity protection diodes.

Features

? Compact Package with J?Bend Leads Ideal for Automated Handling

? Highly Stable Oxide Passivated Junction

? Guardring for Overvoltage Protection

? Low Forward Voltage Drop

? NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable*

? These are Pb?Free Devices

Mechanical Characteristics:

? Case: Molded Epoxy

? Epoxy Meets UL 94, V?O at 0.125 in

? Weight: 95 mg (approximately)

? Cathode Polarity Band

? Lead and Mounting Surface Temperature for Soldering Purposes:

260?C Max. for 10 Seconds

? Available in 12 mm Tape, 2500 Units per 13? Reel, Add “T3” Suffix

to Part Number

? Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

? ESD Ratings: Human Body Model = 3B

Machine Model = C

? Marking: SS26