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SST29EE512-70-4I-NH

512 Kbit (64K x8) Page-Write EEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NH

512 Kbit (64K x8) Page-Write EEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512 Kbit (64K x8) Page-Write EEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4I-NHE

512 Kbit (64K x8) Page-Write EEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-EHE

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

PRODUCTDESCRIPTION TheSST29EE/LE/VE512are64Kx8CMOS,Page-WriteEEPROMsmanufacturedwithSST’sproprietary,highperformanceCMOSSuperFlashtechnology.Thesplitgatecelldesignandthickoxidetunnelinginjectorattainbetterreliabilityandmanufacturabilitycomparedwithalternateappro

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NH

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

SST29EE512-70-4C-NHE

512Kbit(64Kx8)Page-WriteEEPROM

SST

Silicon Storage Technology, Inc

詳細參數

  • 型號：

    SST29EE512-70-4I-NH

  • 功能描述：

    閃存 64K X 8 70ns

  • RoHS：

    否

  • 制造商：

    ON Semiconductor

  • 數據總線寬度：

    1 bit

  • 存儲類型：

    Flash

  • 存儲容量：

    2 MB

  • 結構：

    256 K x 8

  • 接口類型：

    SPI

  • 電源電壓-最大：

    3.6 V

  • 電源電壓-最?。?/span>

    2.3 V

  • 最大工作電流：

    15 mA

  • 工作溫度：

    - 40 C to + 85 C

  • 安裝風格：

    SMD/SMT

  • 封裝：

    Reel

供應商型號品牌批號封裝庫存備注價格
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1948+
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22+
NA
500000
萬三科技,秉承原裝,購芯無憂
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70
全新原裝進口自己庫存優(yōu)勢
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2447
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一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
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23+
TSOP32
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23+
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50000
全新原裝正品現貨,支持訂貨
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更多SST29EE512-70-4I-NH供應商 更新時間2025-3-10 14:02:00

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