首頁(yè)>SST34HF1621-70-4C-LFP>規(guī)格書(shū)詳情

SST34HF1621-70-4C-LFP中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

SST34HF1621-70-4C-LFP
廠商型號(hào)

SST34HF1621-70-4C-LFP

功能描述

16 Mbit Concurrent SuperFlash 2 / 4 Mbit SRAM ComboMemory

文件大小

486.7 Kbytes

頁(yè)面數(shù)量

32 頁(yè)

生產(chǎn)廠商 Silicon Storage Technology, Inc
企業(yè)簡(jiǎn)稱(chēng)

SST

中文名稱(chēng)

Silicon Storage Technology, Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-5-21 9:57:00

人工找貨

SST34HF1621-70-4C-LFP價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

SST34HF1621-70-4C-LFP規(guī)格書(shū)詳情

PRODUCT DESCRIPTION

The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF1621/1641 devices are ideal for applications such as cellular phones, GPSs, PDAs and other portable electronic devices in a low power and small form factor system.

FEATURES:

? Flash Organization: 1M x16

? Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 12 Mbit + 4 Mbit

? SRAM Organization:

– 2 Mbit: 256K x8 or 128K x16

– 4 Mbit: 512K x8 or 256K x16

? Single 2.7-3.3V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 μA (typical)

? Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

? Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

? Sector-Erase Capability

– Uniform 1 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Read Access Time

– Flash: 70 and 90 ns

– SRAM: 70 and 90 ns

? Latched Address and Data

? Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 μs (typical)

– Chip Rewrite Time: 8 seconds (typical)

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

? CMOS I/O Compatibility

? JEDEC Standard Command Set

? Conforms to Common Flash Memory Interface (CFI)

? Packages Available

– 56-ball LFBGA (8mm x 10mm)

產(chǎn)品屬性

  • 型號(hào):

    SST34HF1621-70-4C-LFP

  • 制造商:

    SST

  • 制造商全稱(chēng):

    Silicon Storage Technology, Inc

  • 功能描述:

    16 Mbit Concurrent SuperFlash + 2/4 Mbit SRAM ComboMemory

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SILICA
23+
NA
1846
專(zhuān)做原裝正品,假一罰百!
詢價(jià)
SST
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
SST
24+
BGA
6000
只做原裝,歡迎詢價(jià),量大價(jià)優(yōu)
詢價(jià)
SST/超捷
25+
原廠原封可拆樣
54687
百分百原裝現(xiàn)貨 實(shí)單必成
詢價(jià)
SST
24+
NA/
4250
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持!
詢價(jià)
SST
24+
BGA
35200
一級(jí)代理/放心采購(gòu)
詢價(jià)
現(xiàn)貨SST
21+
BGA
2000
全新原裝 現(xiàn)貨 價(jià)優(yōu)
詢價(jià)
SST
23+
BGA
11200
原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
詢價(jià)
SST
22+
PLCC-32
8000
原裝現(xiàn)貨庫(kù)存.價(jià)格優(yōu)勢(shì)
詢價(jià)
SST
24+
PLCC-32
37500
原裝正品現(xiàn)貨,價(jià)格有優(yōu)勢(shì)!
詢價(jià)