SST34HF1642C-70-4E-B1SE中文資料SST數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PRODUCT DESCRIPTION

The SST34HF16x2C/D/S ComboMemory devices integrate either a 1M x16 or 2M x8 CMOS flash memory bank with either a 128K x16/256K x8, 256K x16/512 x8, or 512K x16/1024K x8 CMOS SRAM or pseudo SRAM (PSRAM) memory bank in a multi-chip package (MCP). These devices are fabricated using SST’s proprietary, high-performance CMOS SuperFlash technology incorporating the split-gate cell design and thick-oxide tunneling injector to attain better reliability and manufacturability compared with alternate approaches. The SST34HF16x2C/D/S devices are ideal for applications such as cellular phones, GPS devices, PDAs, and other portable electronic devices in a low power and small form factor system.

FEATURES:

? Flash Organization: 1M x16 or 2M x8

? Dual-Bank Architecture for Concurrent Read/Write Operation

– 16 Mbit: 4 Mbit + 12 Mbit

? (P)SRAM Organization:

– 2 Mbit: 128K x16 or 256K x8

– 4 Mbit: 256K x16 or 512K x8

– 8 Mbit: 512K x16 or 1024K x8

? Single 2.7-3.3V Read and Write Operations

? Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

? Low Power Consumption:

– Active Current: 25 mA (typical)

– Standby Current: 20 μA (typical)

? Hardware Sector Protection (WP#)

– Protects 4 outer most sectors (4 KWord) in the larger bank by holding WP# low and unprotects by holding WP# high

? Hardware Reset Pin (RST#)

– Resets the internal state machine to reading data array

? Byte Selection for Flash (CIOF pin)

– Selects 8-bit or 16-bit mode

? Sector-Erase Capability

– Uniform 2 KWord sectors

? Block-Erase Capability

– Uniform 32 KWord blocks

? Read Access Time

– Flash: 70 ns

– (P)SRAM: 70 ns

? Erase-Suspend / Erase-Resume Capabilities

? Security ID Feature

– SST: 128 bits

– User: 128 bits

? Latched Address and Data

? Fast Erase and Word-/Byte-Program (typical):

– Sector-Erase Time: 18 ms

– Block-Erase Time: 18 ms

– Chip-Erase Time: 35 ms

– Word-Program Time: 7 μs

? Automatic Write Timing

– Internal VPP Generation

? End-of-Write Detection

– Toggle Bit

– Data# Polling

– Ready/Busy# pin

? CMOS I/O Compatibility

? JEDEC Standard Command Set

? Packages Available

– 56-ball LFBGA (8mm x 10mm)

– 62-ball LFBGA (8mm x 10mm)