首頁 >SSW4N60BTM>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
4A,600VN-CHANNELMOSFET GENERALDESCRIPTION SVF4N60CAF/K/D/T/MN/MJisanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailoredto minimizeon-stateres | SILANSilan Microelectronics Joint-stock 士蘭微杭州士蘭微電子股份有限公司 | SILAN | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI |
詳細參數(shù)
- 型號：
SSW4N60BTM
- 功能描述：
MOSFET N-Ch/600V/4a/2.5Ohm
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
23+ |
D2PAK |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
24+ |
TO-263 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
24+ |
N/A |
9200 |
詢價 | ||||
FAIRCHILD/仙童 |
23+ |
TO |
10000 |
公司只做原裝正品 |
詢價 | ||
FAIRCHILD/仙童 |
TO |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
仙童 |
24+ |
TO |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO263 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價 | ||
FSC |
22+23+ |
TO-263 |
28968 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-263 |
30000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 |
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