ST13003_01中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

■ MEDIUM VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

APPLICATIONS:

■ ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

■ SWITCH MODE POWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

The device is designed for use in lighting

applications and low cost switch-mode power

supplies.