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STAP57060中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STAP57060
廠商型號(hào)

STAP57060

功能描述

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

文件大小

261.44 Kbytes

頁面數(shù)量

16

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 23:00:00

STAP57060規(guī)格書詳情

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 60 W with 14.3 dB gain @ 945 MHz /

28 V

■ ST advanced PowerSO-10 RF-STAP-package

Description

The STAP57060 is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

MOSFET. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. STAP57060 boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in STAP1 plastic RF power

package.

STAP package has been specially optmized for

RF needs and offers excellent performances and

ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294)

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SSC(首爾半導(dǎo)體)
23+
SMD,3x3mm
7350
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66900
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23+
NA/
3500
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AD
2020+
BGA
80000
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SM Switch
23+
插件
6000
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ST
原廠原封
93480
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STM原廠目錄
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PowerSO2
28500
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12335
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22+
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20000
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21+
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35000
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