STD35NF3LL-1中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

This application specific Power MOSFET is the third genaration of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

■ TYPICAL RDS(on) = 0.016 ? @ 4.5V

■ OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DRIVE

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX “-1)

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4)

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC

CONVERTERS