首頁(yè) >STD45N10F7/SADA>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
Ultralowon-resistance | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features ?AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor Features LowRDS(on)&FOM Extremelylowswitchingloss ExcellentstabilityanduniformityorInvertors Applications Consumerelectronicpowersupply Motorcontrol Synchronous-rectification IsolatedDC Synchronous-rectificationapplication | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
Automotive-gradeN-channel100V,20mΩtyp.,18A,STripFET?F7PowerMOSFETinaPowerFLAT?5x6package Features ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness ?Wettableflankpackage ?AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofm | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司 | VBSEMI | ||
N-channel100V,0.0145typ.,45A,STripFETVIIDeepGATEPowerMOSFETsinDPAK,I2PAKandTO-220packages Description TheseN-channelPowerMOSFETsutilizeSTripFET?F7technologywithanenhancedtrenchgatestructurethatresultsinverylowonstateresistance,whilealsoreducinginternalcapacitanceandgatechargeforfasterandmoreefficientswitching. Features ?AmongthelowestRDS(on)on | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤18m? ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC |
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