首頁 >STD4N62K3>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

STD4N62K3

N-channel 620 V, 1.7 廓, 3.8 A SuperMESH3 Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STF4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STFI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STI4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STI4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP4N62K3

N-channel620V,1.7廓typ.,3.8ASuperMESH3PowerMOSFET

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STP4N62K3

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

STP4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STU4N62K3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.8A@TC=25℃ ·DrainSourceVoltage-VDSS=620V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    STD4N62K3

  • 功能描述：

    MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
24+
TO252
8950
BOM配單專家,發(fā)貨快,價格低
 詢價
ST/意法
22+
TO252
5000
原廠原裝現(xiàn)貨
 詢價
ST
23+
TO252
6996
只做原裝正品現(xiàn)貨
 詢價
ST
24+
DPAK
9150
絕對原裝現(xiàn)貨,價格低,歡迎詢購!
 詢價
ST/意法半導(dǎo)體
22+
TO-252-3
6000
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST/意法
2021+
TO-252
9000
原裝現(xiàn)貨,隨時歡迎詢價
 詢價
ST(意法半導(dǎo)體)
24+
TO-252
9555
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST/意法半導(dǎo)體
24+
TO-252-3
4650
絕對原裝公司現(xiàn)貨
 詢價
ST
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
ST
17+
TO-252
6200
100%原裝正品現(xiàn)貨
 詢價
更多STD4N62K3供應(yīng)商 更新時間2025-4-13 16:36:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多