首頁 >STD5N52K3IC>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD?PAK,DPAK,TO-220FP,TO-220,IPAK | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.2廓,4.4ASuperMESH3??PowerMOSFETD?PAK,DPAK,TO-220FP,TO-220,IPAK | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4.4A@TC=25℃ ·DrainSourceVoltage-VDSS=525V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-channel525V,1.2ohm,4.4ASuperMESH3PowerMOSFET Description ThesedevicesaremadeusingtheSuperMESH3?PowerMOSFETtechnologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingproducthasanextremelylowonresistance,superiordynamicperf | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
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