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STF11N50M2

N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220FP package

These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter; ? Extremely low gate charge\n? Excellent output capacitance (COSS) profile? 100% avalanche tested\n? Zener-protected;

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STF11N52K3

N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsmadeusingtheSuperMESH3?technologythatisobtainedviaimprovementsappliedtoSTMicroelectronics’SuperMESH?technologycombinedwithanewoptimizedverticalstructure.Theresultingtransistorhasanextremelylowonresistance,superio

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STF11N60DM2

N溝道600 V、0.370 Ohm典型值、10 A MDmesh DM2功率MOSFET，TO-220FP封裝

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift; ? Fast-recovery body diode \n? Extremely low gate charge and input capacitance \n? Low on-resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

STSTMicroelectronics

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STF11N60M2-EP

N-channel 600 V, 0.550 typ., 7.5 A MDmesh? M2 EP Power MOSFET in a TO-220FP package

Features ?Extremelylowgatecharge ?Excellentoutputcapacitance(COSS)profile ?Verylowturn-offswitchinglosses ?100avalanchetested ?Zener-protected Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingMDmesh? M2enhancedperformance(EP)technology.Thanksto

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STF11N65M5

N-channel 650 V, 0.43 廓 typ., 9 A MDmesh??V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

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STF11N65M5

N-channel 650 V, 0.43 typ., 9 A MDmesh V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

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STF11NM50N

N-channel 500 V, 0.4, 8.5 A MDmesh II Power MOSFET in DPAK, TO-220FP and TO-220

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

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STF11NM60N

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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STF11NM60N

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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STF11NM60N

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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詳細(xì)參數(shù)

  • 型號(hào)：

    STF11

  • 功能描述：

    MOSFET N-channel 525 V 0.41 Ohm, 10 A SuperMESH3

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
1701+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
 詢價(jià)
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
23+
TO-220屬封
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST
22+
TO2203
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
ST
21+
TO-220屬封
10
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
ST
23+
TO-220F
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
22+
N
30000
十七年VIP會(huì)員,誠(chéng)信經(jīng)營(yíng)，一手貨源，原裝正品可零售！
 詢價(jià)
STMicroelectronics
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
 詢價(jià)
ST
25+
TO-220屬封
14682
詢價(jià)
更多STF11供應(yīng)商 更新時(shí)間2025-8-3 15:10:00

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