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STG50M120F3D7中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

STG50M120F3D7
廠商型號(hào)

STG50M120F3D7

功能描述

Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

文件大小

243.31 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡(jiǎn)稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團(tuán)官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-26 22:58:00

STG50M120F3D7規(guī)格書詳情

Features

? Maximum junction temperature: TJ = 175 °C

? 10 μs of short-circuit withstand time

? Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A

? Tight parameter distribution

? Positive VCE(sat) temperature coefficient

Applications

? Industrial motor control

? Industrial drives

? Solar inverters

? Uninterruptable power supplies (UPS)

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss

and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

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