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STHI07N50中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

STHI07N50
廠商型號

STHI07N50

功能描述

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

文件大小

291.08 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 9:02:00

STHI07N50規(guī)格書詳情

? HIGH INPUT IMPEDANCE

? LOW ON-VOLTAGE

? HIGH CURRENT CAPABILITY

APPLICATIONS:

? AUTOMOTIVE IGNITION

? DRIVERS FOR SOLENOIDS AND RELAYS

N-channel High Injection POWER MOS transis-

tors (IGBT) which features a high impedance in-

sulated gate input and a low on-resistance

characteristic of bipolar transistors. This low

resistance is achieved by conductivity modulation

of the drain. These devices are particularly suited

to automative ignition switching. They can also be

used as drivers for solenoids and relays.

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