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STN4NF03

N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03

N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET? II POWER MOSFET

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

ST

STN4NF03L

N溝道30V - 0.039 Ohm - 4A - SO-223 STripFET(TM) 功率MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufactur; ? Low threshold drive;

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

ST

STN4NF03L

N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET??II POWER MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03L

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03L

N-channel 30 V - 0.039 廓 - 6.5 A - SOT-223 STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03L_06

N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET

Description ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique“SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03L_07

N-channel 30 V - 0.039 廓 - 6.5 A - SOT-223 STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STN4NF03L

N-Channel 30 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

VBSEMI

技術(shù)參數(shù)

  • Package：

    SOT-223

  • Grade：

    Industrial

  • VDSS(V)：

    30

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.05

  • Drain Current (Dc)_max(A)：

    4

  • PTOT_max(W)：

    2.5

  • Qg_typ(nC)：

    6.5

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
ST/意法
24+
SOT-223
20000
只做原廠渠道 可追溯貨源
 詢價(jià)
ST/意法
24+
SOT-223
504892
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
ST
24+
SOT-223
14460
詢價(jià)
ST
24+
SOT-223
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理
 詢價(jià)
ST
23+
SOT-223
63000
原裝正品現(xiàn)貨
 詢價(jià)
ST/意法
23+
SOT-223
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
2022+
SOT223
52500
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
ST/意法
22+
SOT223
100000
代理渠道/只做原裝/可含稅
 詢價(jià)
ST/意法
24+
NA/
22110
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
ST
2022+
SOT-223
48000
只做原裝,原裝,假一罰十
 詢價(jià)
更多STN4NF03供應(yīng)商 更新時(shí)間2025-8-4 9:24:00

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