STO68N65DM6中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書

Features

? Fast-recovery body diode

? Lower RDS(on) per area vs previous generation

? Low gate charge, input capacitance and resistance

? 100 avalanche tested

? Extremely high dv/dt ruggedness

? Zener-protected

? Excellent switching performance thanks to the extra driving source pin

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery

diode series. Compared with the previous MDmesh fast generation,

DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent

improvement in RDS(on) per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Applications

? Switching applications