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STP10N60M2

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STP10N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STP10N60M2

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

STB10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STB10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STD10N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

STD10N60M2

N-channel600V,0.550typ.,7.5AMDmeshIIPluslowQgPowerMOSFETsinD?PAK

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STF10N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STFH10N60M2

Extremelylowgatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

STL10N60M2

N-channel600V,0.580廓typ.,5.5AMDmeshIIPlus??lowQgPowerMOSFETinaPowerFLAT??5x6HVpackage

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh? technology:MDmeshIIPlus?lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

詳細參數(shù)

  • 型號：

    STP10N60M2

  • 制造商：

    STMicroelectronics

  • 功能描述：

    POWER MOSFET - Rail/Tube

  • 功能描述：

    MOSFET N-CH 600V TO-220

  • 功能描述：

    STP10N60M2 Series 600 V 7.5 A 0.6 Ohm N-channel Power MOSFET - TO-220-3

  • 功能描述：

    MOSFET N-Channel 600V 7.5A TO-220

  • 功能描述：

    MOSFET N-Ch 600V 7.5A MDmesh II TO-220

  • 功能描述：

    N-channel 600V,0.56Ohm,7.5A Power MOSFET

  • 功能描述：

    600V,0.56,7.5A,N-Channel Power MOSFET

供應商型號品牌批號封裝庫存備注價格
STMicroelectronics
24+
TO-220
30000
晶體管-分立半導體產(chǎn)品-原裝正品
 詢價
ST/意法半導體
22+
TO-220-3
6004
原裝正品現(xiàn)貨 可開增值稅發(fā)票
 詢價
ST
23+
NA
30000
15年原裝正品企業(yè)
 詢價
ST(意法半導體)
23+
TO-220
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
ST
2016+
TO-220
6528
房間原裝進口現(xiàn)貨假一賠十
 詢價
STMicroelectronics
18+
NA
3000
進口原裝正品優(yōu)勢供應
 詢價
ST
23+
TO-220
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
ST
2020+
TO-220
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
ST
2021+
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
更多STP10N60M2供應商 更新時間2025-1-26 10:12:00

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