STP80N03L-06

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.005? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTED

STP80N05-09

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODE”ULTRAHIGHDENSITY”POWERMOSTRANSISTOR ■ULTRAHIGHDENSITYTECHNOLOGY ■TYPICALRDS(on)=7m? ■AVALANCHERUGGEDTECHNOLOGY ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE APPLICATIONS ■SYNCROUNOUSRECTIFIERS ■HIGHCURRENT,HIG

STP80N06-10

N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEULTRAHIGHDENSITYPOWERMOSTRANSISTOR ■TYPICALRDS(on)=8.5m? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCETESTED ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCU

STP80N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. ?Extremelylowgatecharge ?Ultralowon-resistance ?Lowgateinputresistance A

STP80N240K6

Marking：80N240K6；Package：TO-220；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features ?WorldwidebestRDS(on)xarea ?WorldwidebestFOM(figureofmerit) ?Ultralowgatecharge ?100avalanchetested ?Zener-protected Applications ?Flybackconverter ?Adaptersfortablets,notebookandAIO ?LEDlighting

STP80N240K6_V01

N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

Features ?WorldwidebestRDS(on)xarea ?WorldwidebestFOM(figureofmerit) ?Ultralowgatecharge ?100avalanchetested ?Zener-protected Applications ?Flybackconverter ?Adaptersfortablets,notebookandAIO ?LEDlighting

STP80N340K6

Marking：80N340K6；Package：TO-220；N-channel 800 V, 285 mΩ typ., 12 A MDmesh K6 Power MOSFET in a TO-220 package

Features ?WorldwidebestRDS(on)xarea ?WorldwidebestFOM(figureofmerit) ?Ultralowgatecharge ?100avalanchetested ?Zener-protected Applications ?Flybackconverter ?Adaptersfortablets,notebookandAIO ?LEDlighting Description ThisveryhighvoltageN-channelPowerMO

STP80N450K6

Marking：80N450K6；Package：TO-220；N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package

Features ?WorldwidebestRDS(on)xarea ?WorldwidebestFOM(figureofmerit) ?Ultralowgatecharge ?100avalanchetested ?Zener-protected Applications ?Flybackconverter ?Adaptersfortablets,notebookandAIO ?LEDLighting Description ThisveryhighvoltageN-channelPowerMO

STP80N6F6

Automotive-grade N-channel 60 V, 4.4 m??typ., 80 A STripFET??VI DeepGATE??Power MOSFET in a TO-220 package

Description ThisdeviceisanN-channelPowerMOSFET developedusingthe6thgenerationofSTripFET? DeepGATE?technology,withanewgate structure.TheresultingPowerMOSFETexhibits thelowestRDS(on)inallpackages. Features ?Designedforautomotiveapplicationsand AEC-Q101quali

STP80NE03L

N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

DESCRIPTION ThisPowerMosfetisthelatestdevelopmentofSTMicroelectronicsunique”SingleFeatureSize?”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon-resistance,ruggedavalancecharacteristicsandlesscriticalalignmentstepsthereforearemar