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11006

TESTJACKS

etc2List of Unclassifed Manufacturers

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11006F

PVCandNylonLEDSpacers

HeycoHeyco.

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11006-R

TESTJACKS

etc2List of Unclassifed Manufacturers

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ADJ11006

1-pole/2-pole16ApolarizedpowerrelaysVarietyofcontactarrangements

FEATURES 1.Varietyofcontactarrangements Widelineupof1FormC,1FormA,1FormB,2FormC,2FormA,2FormB,1FormA1FormB. 2.Latchingoperation Latchingviaapolarizedmagneticcircuitstructureallowsremoteoperationandlowerenergyconsumption 3.Compactwithhighc

PanasonicPanasonic Semiconductor

松下松下電器

AN11006

Singlestage2.3_2.7GHzLNAwithBFU730F

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PS11006

PatchLead-CAT5E

PatchLead-CAT5E ElectricalTest 100openshortandmisswiretest

ETC1List of Unclassifed Manufacturers

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SKLD11006

DCSolidStateRelayforprintedcircuitboards

CELDUCcelduc Relais

凡紀(jì)繼電器凡紀(jì)繼電器（上海）有限公司

TPH11006NL

MOSFETsSiliconN-channelMOS

Applications ?SwitchingVoltageRegulators ?DC-DCConverters ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPN11006NL

MOSFETsSiliconN-channelMOS

Applications ?SwitchingVoltageRegulators ?DC-DCConverters ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPN11006PL

MOSFETsSiliconN-channelMOS

Applications ?High-EfficiencyDC-DCConverters ?SwitchingVoltageRegulators ?MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.8nC(typ.) (3)Smalloutputcharge:Qoss=14.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=8.8mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

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SK
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更多STR11006供應(yīng)商 更新時(shí)間2025-2-3 10:32:00

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