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STU9N60M2

Extremely low gate charge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STU9N60M2

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.78Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

STU9N60M2

N溝道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，IPAK封裝

These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter; ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

ST

9N60M2

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

VBSEMI

STD9N60M2

Extremelylowgatecharge

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STMICROELECTRONICS

STD9N60M2

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=5.5A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.78Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC

技術(shù)參數(shù)

  • Package：

    IPAK

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.78

  • Drain Current (Dc)_max(A)：

    5.5

  • PTOT_max(W)：

    60

  • Qg_typ(nC)：

    7.5

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
24+
TO-251
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
STMicroelectronics
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
ST
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO-251
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
STMicroelectronics
24+
原廠原裝
5850
原裝正品 現(xiàn)貨庫存價格優(yōu)勢!
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST/意法半導(dǎo)體
23+
TO-251-3
6900
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法
23+
TO-251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法半導(dǎo)體
24+
TO-251-3
30000
原裝正品公司現(xiàn)貨,假一賠十!
 詢價
ST/意法半導(dǎo)體
24+
TO-251-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
更多STU9N60M2供應(yīng)商 更新時間2025-8-3 16:12:00

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