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STW12

Current-Relay STW12 AC-Detection, 12-channel, Single evaluation, OR-Circuit

ZIEHL

ZIEHL industrie-elektronik GmbH + Co KG

STW120NF10

N-channel 100V - 0.009OHM - 110A - TO-247 - TO-220 - D2PAK STripFET2 Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizetheon-resistance.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersfortelecom

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW120NF10

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizetheon-resistance.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersfortelecom

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW120NF10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12N120K5

N-Channel Super Junction MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.62Ω(TYP)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12N170

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12N170K5

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=1700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12NA50

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW12NA50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=11.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12NA60

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW12NA60

fast power mos transistor

DESCRIPTION ThisseriesofPOWERMOSFETSrepresentsthemostadvancedhighvoltagetechnology.TheoptimizedcelllayoutcoupledwithanewproprietaryedgeterminationconcurtogivethedevicelowRDS(on)andgatecharge,unequalledruggednessandsuperiorswitchingperformance. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW12NA60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12NB60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12NC60

N-CHANNEL 600V - 0.48ohm - 12A TO-247 PowerMeshII MOSFET

DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW12NC60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STW12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH??ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

STW12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH??ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

STW12NK80Z

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH??ower MOSFET

N-CHANNEL800V-0.651}-10.5ATO-220/D2PAK/TO-247Zener-ProtectedSuperMESH?PowerMOSFET ■TYPICALRos(on)=0.65Q ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURINGREPEATIBILITY APPLICATIONS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

STW12NK80Z

N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH? Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

STW12NK80Z

isc N-Channel MOSFET Transistor

DESCRIPTION ·DrainCurrent:ID=10.5A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·motordrive,

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號：

    STW12

  • 功能描述：

    MOSFET POWER MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
05+
TO-247
2380
原裝進口
 詢價
24+
N/A
1970
詢價
ST
23+
TO-247
8795
詢價
ST
23+
TO-247
7500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
ST
24+
TO-3P
1000
原裝現(xiàn)貨熱賣
 詢價
ST
17+
TO-247
6200
詢價
STMicro.
23+
TO-247
7750
全新原裝優(yōu)勢
 詢價
ST
10+
5000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
ST
24+
TO-247-3
600
原裝現(xiàn)貨假一罰十
 詢價
ST
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價
更多STW12供應(yīng)商 更新時間2025-1-11 10:32:00

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