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SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

絲?。?a target="_blank" title="Marking" href="/7n65rmj/marking.html">7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance,

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF7N65RMJ

平面高壓MOS功率管

SVF7N65RD(MJ)(FJH)(F)(T) N溝道增強型高壓功率MOS場效應晶體管采用士蘭微電子F-CellTM平面高壓VDMOS 工藝技術(shù)制造。先進的工藝及元胞結(jié)構(gòu)使得該產(chǎn)品具有較低的導通電阻、優(yōu)越的開關性能及很高的雪崩擊穿耐量。\n\n 該產(chǎn)品可廣泛應用于AC-DC開關電源，DC-DC電源轉(zhuǎn)換器，高壓H橋PWM馬達驅(qū)動。\n\n; ? 7A，650V，RDS(on)(典型值)=1.2Ω@VGS=10V\n? 低柵極電荷量\n? 低反向傳輸電容\n? 開關速度快\n? 提升了dv/dt 能力\n;

SilanSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

技術(shù)參數(shù)

  • Status：

    Sample

  • Type：

    N

  • Process：

    F-cell

  • Configuration：

    Single

  • Popular Application：

    High Voltage

  • ESD Diode：

    NO

  • Schottky Diode：

    NO

  • Schottky Type：

    NO

  • Package：

    TO-251J-3L

  • VGS：

    30

  • ID @25℃：

    2~4

  • PD @25℃：

    7

  • RDS[ON]@VGS=10v：

    90

  • VGS[th]：

    1.40

  • Ciss：

    895.00

  • Crss：

    7.50

  • Qg：

    24.00

  • Qgd：

    11.00

  • Td[on]：

    14.00

  • Td[off]：

    58.00

供應商型號品牌批號封裝庫存備注價格
SVF
1948+
TO-251
18562
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
士蘭微
24+
10000
原裝現(xiàn)貨
 詢價
SILAN/士蘭微
24+
TO-251
40000
專營SILAN士蘭微原裝保障
 詢價
SILAN/士蘭微
2022+
TO-263
50000
原廠代理 終端免費提供樣品
 詢價
SILAN/士蘭微
2022+
TO-263
30000
進口原裝現(xiàn)貨供應,絕對原裝 假一罰十
 詢價
SILAN/士蘭微
2022+
TO-263
30000
進口原裝現(xiàn)貨供應,原裝 假一罰十
 詢價
SILAN/士蘭微
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
SILAN/士蘭微
24+
NA/
4186
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
SILAN/士蘭微
24+
TO-220
60000
全新原裝現(xiàn)貨
 詢價
SILAN
24+
DIPSOP
33520
一級代理/放心購買
 詢價
更多SVF7N65RMJ供應商 更新時間2025-8-3 16:59:00

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