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SVSP11N65D中文資料士蘭微數(shù)據(jù)手冊PDF規(guī)格書
SVSP11N65D規(guī)格書詳情
DESCRIPTION
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode
high voltage power MOSFETs produced using Silan’s super junction
MOS technology. It achieves low conduction loss and switching
losses. It leads the design engineers to their power converters with
high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.e., suitable for hard and soft
switching topologies.
FEATURES
? 11A,650V, RDS(on)(typ.)=0.33?@VGS=10V
? New revolutionary high voltage technology
? Ultra low gate charge
? Periodic avalanche rated
? Extreme dv/dt rated
? High peak current capability
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Silan |
23+ |
TO-247 |
2795 |
現(xiàn)貨庫存,實單請給接受價格 |
詢價 | ||
SILAN |
22+ |
PDFN8 |
621 |
全新原裝只做自己庫存只做原裝 |
詢價 | ||
24+ |
N/A |
58000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
SILAN/士蘭微 |
TO220 |
90000 |
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī) |
詢價 | |||
SILAN/士蘭微 |
24+ |
TO220F |
15000 |
只做全新原裝正品現(xiàn)貨 假一罰十 |
詢價 | ||
SILAN(士蘭微) |
23+ |
TO-220FJD-3L |
431 |
三極管/MOS管/晶體管 > 場效應管(MOSFET) |
詢價 | ||
SAMSUNG |
24+ |
QFP |
71 |
詢價 | |||
冠坤電子 |
21+ |
10mm*12.5mm |
13 |
全新原裝鄙視假貨15118075546 |
詢價 | ||
SILAN/士蘭微 |
24+ |
TO-220 |
126000 |
專營SILAN士蘭微原裝保障 |
詢價 | ||
Silan |
23+ |
TO-247 |
20000 |
原裝正品價格優(yōu)惠,志同道合共謀發(fā)展 |
詢價 |
