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SVSP7N60FJDD2

絲?。?a target="_blank" title="Marking" href="/p7n60fjdd2/marking.html">P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

絲?。?a target="_blank" title="Marking" href="/p7n60fjdd2/marking.html">P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

絲印：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

絲?。?a target="_blank" title="Marking" href="/p7n60fjdd2/marking.html">P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

絲?。?a target="_blank" title="Marking" href="/p7n60fjdd2/marking.html">P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

絲印：P7N60FJDD2；Package：TO-220FJD-3L；7A, 600V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVSP7N60F(FJD)(D)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerdens

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVSP7N60FJDD2

超結(jié)MOS功率管

SVSP11N60FJ(D)D2? N溝道增強型高壓功率MOSFET采用士蘭微電子超結(jié) MOS技術(shù)平臺制造，具有很低的傳導損耗和開關損耗。使得功率轉(zhuǎn)換器具有高效，高功率密度，提高熱行為。\n\n 此外，SVSP11N60FJ(D)D2應用廣泛。如，適用于硬/軟開關拓撲。\n\n; ? 11A,600V, RDS(on)(typ.)=0.3W@VGS=10V?\n? 創(chuàng)新高壓技術(shù)\n? 低柵極電荷\n? 較強的雪崩能力\n? 較強的dv/dt能力\n? 較高的峰值電流能力\n;

SilanSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

技術(shù)參數(shù)

  • Polarity：

    N

  • Vdss (V)：

    600

  • Id (A)Tc=25℃：

    7

  • Vgs (th) (V)：

    2.0~4.0

  • Rds(on) @10V typ (?)：

    480

  • Rds (on) @10Vmax (?)：

    580

  • Qg@10Vtyp (nC)：

    16

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