TE28F020-90中文資料英特爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F020 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard during subassembly test; in-system during final test; and in-system after-sale. The 28F020 increases memory flexibility, while contributing to time-and cost-savings.

■ Flash Electrical Chip-Erase

— 2 Second Typical Chip-Erase

■ Quick-Pulse Programming Algorithm

— 10 ms Typical Byte-Program

— 4 Second Chip-Program

■ 100,000 Erase/Program Cycles

■ 12.0V g5 VPP

■ High-Performance Read

— 70 ns Maximum Access Time

■ CMOS Low Power Consumption

— 10 mA Typical Active Current

— 50 mA Typical Standby Current

— 0 Watts Data Retention Power

■ Integrated Program/Erase Stop Timer

■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

■ Noise Immunity Features

— g10 VCC Tolerance

— Maximum Latch-Up Immunity through EPI Processing

■ ETOXTM Nonvolatile Flash Technology

— EPROM-Compatible Process Base

— High-Volume Manufacturing Experience

■ JEDEC-Standard Pinouts

— 32-Pin Plastic Dip

— 32-Lead PLCC

— 32-Lead TSOP

(See Packaging Spec., Order Y231369)

■ Extended Temperature Options