TGA2625

10 - 11 GHz, 20 Watt GaN Power Amplifier

Qorvo's TGA2625 is an x-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGA2625 operates from 10 to 11GHz and provides a superior combination of power, gain and efficiency. Achieving 20W of saturated output power with 28dB of large signal gain and grea; ? Frequency range: 10 - 11GHz\n? PSAT: 43dBm\n? PAE: >42%\n? Small signal gain: 37dB\n? Return loss: >11dB\n? Bias: VD = 28V (CW or Pulsed), IDQ = 365mA, VG = -2.5V typical\n? Pulsed VD: PW = 100 us, DC = 10%\n? Chip dimensions: 5.0 x 2.62 x 0.10 mm\n;

TGA2625

10 to 11GHz 20W GaN Power Amplifier

TGA2625-CP

10 - 11 GHz, 17 Watt GaN Power Amplifier

Qorvo's TGA2625-CP is a packaged high-power X-Band amplifier fabricated on Qorvo's TQGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a power-added efficiency of > 40 %, and power gain of 28 dB.\nThe TGA2625-CP is packaged in; ? Frequency range: 10 – 11 GHz\n? Pout: 42.5 dBm (at PIN = 15 dBm)\n? PAE: > 40%\n? Power gain: 28 dB (at PIN = 15 dBm)\n? Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 us, DC = 10%)\n? Package dimensions: 15.2 x 15.2 x 3.5 mm\n? Package base is pure Cu offering superi;

TGA2625_15

10 to 11GHz 20W GaN Power Amplifier

TGA2625-CP

10 to 11 GHz, 17 W GaN Power Amplifier

TGA2625-CP_15

10 to 11 GHz, 17 W GaN Power Amplifier