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TLE2161M

Military-grade, single, 36-V, 6.4-MHz, low-offset (0.6 mV) operational amplifier; ? Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 , VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 , VCC± = ± 15 V\n? Low Supply Current...280 uA Typ\n? Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/us Typ Gain-Bandwidth Product = 6.5 MHz Typ\n? Wide Operating Supply Voltage Range VCC ± = ± 3.5 V to ± 18 V\n? High Open-Loop Gain...280 V/mV Typ\n? Low Offset Voltage...500 uV Max\n? Low Offset Voltage Drift With Time 0.04 uV/Month Typ\n? Low Input Bias Current...5 pA Typ \n TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE u POWER OPERATIONAL AMPLIFIERS SLOS049D - NOVEMBER 1989 - REVISED MAY 1996;

The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161M

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE POWER OPERATIONAL AMPLIFIERS

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MD

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MFK

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MJG

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MJGB

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE POWER OPERATIONAL AMPLIFIERS

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MP

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

TITexas Instruments

德州儀器美國(guó)德州儀器公司

TLE2161MP

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE POWER OPERATIONAL AMPLIFIERS

TI1Texas Instruments

德州儀器美國(guó)德州儀器公司

技術(shù)參數(shù)

  • Rail-to-rail：

    In to V+

  • GBW (Typ) (MHz)：

    6.4

  • Slew rate (Typ) (V/us)：

    10

  • Vos (offset voltage @ 25 C) (Max) (mV)：

    3

  • Iq per channel (Typ) (mA)：

    0.29

  • Vn at 1 kHz (Typ) (nV/rtHz)：

    40

  • Rating：

    Military

  • Operating temperature range (C)：

    -55 to 125

  • Offset drift (Typ) (uV/C)：

    6

  • Features：

    Decompensated

  • Input bias current (Max) (pA)：

    60

  • CMRR (Typ) (dB)：

    90

  • Output current (Typ) (mA)：

    50

  • Architecture：

    FET

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TI
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TI
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TI/德州儀器
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