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TMM41464AP

SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS

FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TMM41464AT

SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS

FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TMM41464AZ-10

SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS

FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TMM41464AZ-12

SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS

FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TMM41464AZ-15

SILICON MONOLITHIC N-CHANNEL SILICON GATE MOS

FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

D41464

DYNAMICNMOSRAM

65,536x4-BitDynamicNMOSRAM

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

KM41464A

64KX4BITDYNAMICRAMWITHPAGEMODE

GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM41464AJ

64KX4BITDYNAMICRAMWITHPAGEMODE

GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM41464AP

64KX4BITDYNAMICRAMWITHPAGEMODE

GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM41464AZ

64KX4BITDYNAMICRAMWITHPAGEMODE

GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere

SamsungSamsung semiconductor

三星三星半導(dǎo)體

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40
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TOSH
91+
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2890
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00+
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1835
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TOSHIBA/東芝
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TOS
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SOP8
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更多TMM41464供應(yīng)商 更新時(shí)間2025-1-27 15:30:00