首頁 >TMP4401>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
NPNNPNPlastic-EncapsulateTransistors Features EpitaxialPlanarDieConstruction IdealforLowPowerAmplificationandSwitching | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
NPNSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
GaAlAsInfraredEmittingDiodesin?3mm(T–1)Package Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs DESCRIPTION TheTSHA440.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES ?Packagetype:leaded ?Packageform:T-1 ?Dimensions(inmm):?3 ?Peakwavelength:?p=875nm ?Highreliability ?Angleofhalfintens | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
InfraredEmittingDiode,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
InfraredEmittingDiode Description TheTSHA44..seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout50radiantpowerimprovement. Features ● | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
FMCarRadioICwithPLL | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SELECTIONGUIDETOHIGH-VOLTAGE/HIGH-CURRENT | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
4LineESD/EMIProtectionforColorLCDInterfaces | UNIONSEMIUnion Semiconductor, Inc. 英聯(lián)英聯(lián)半導體股份有限公司 | UNIONSEMI |
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