TMR1302B

TMR Omnipolar Switch

GeneralDescription TheTMR1302BisadigitalomnipolarmagneticswitchthatintegratesTMRandCMOStechnologyinordertoprovidea magneticallytriggereddigitalswitchwithhighsensitivity,highspeed,andultra-lowpowerconsumption.Itintegratesapush-pull half-bridgeTMRmagneticsens

TMR1302B

超低功耗全極磁開關(guān)傳感器

TMR1302B是一款集成了隧道磁阻（TMR）傳感器和CMOS技術(shù)，為高靈敏度、高速、低功耗、高精度應(yīng)用而開發(fā)的全極磁開關(guān)。TMR1302B采用TMR磁傳感器和CMOS集成電路，包括電壓發(fā)生器、比較器、施密特觸發(fā)器和CMOS輸出電路，能將變化的磁場信號轉(zhuǎn)化為數(shù)字電壓信號輸出。TMR1302B通過內(nèi)部電壓穩(wěn)壓器來提供溫度補償電源，并允許寬的工作電壓范圍。TMR1302B以低電壓工作、微安級的供電電流、高響應(yīng)頻率、寬的工作溫度范圍成為眾多低功耗、高性能應(yīng)用的理想選擇。TMR1302B采用兩種封裝形式：SOT23-3和TO-92S，所對應(yīng)的產(chǎn)品型號分別為TMR1302BS和TMR1302BT。; （1）隧道磁電阻(TMR)技術(shù)\n（2）1.5微安更低功耗\n（3）1kHz高頻率響應(yīng)\n（4）?全極磁開關(guān)\n（5）高靈敏度，低開關(guān)點\n（6）寬工作電壓范圍\n（7）卓越的溫度穩(wěn)定性;

TMR1302G

MicroAmpereHighFrequencyResponseOmnipolarMagneticSwitchSensor

Description TMR130xisanomnipolarmagneticswitchintegrated thetunnelmagnetoresistance(TMR)magnetic sensorandCMOScircuitry,whichisabletodetect thechangeofmagneticfieldandoutputhighandlow voltagesignalsforhighaccuracypositiondetection. UnlikeHall/AMRsensors,TM

TMR1302HS

MicroAmpereHighFrequencyResponseOmnipolarMagneticSwitchSensor

Description TMR130xisanomnipolarmagneticswitchintegrated thetunnelmagnetoresistance(TMR)magnetic sensorandCMOScircuitry,whichisabletodetect thechangeofmagneticfieldandoutputhighandlow voltagesignalsforhighaccuracypositiondetection. UnlikeHall/AMRsensors,TM

TMR1302HT

MicroAmpereHighFrequencyResponseOmnipolarMagneticSwitchSensor

Description TMR130xisanomnipolarmagneticswitchintegrated thetunnelmagnetoresistance(TMR)magnetic sensorandCMOScircuitry,whichisabletodetect thechangeofmagneticfieldandoutputhighandlow voltagesignalsforhighaccuracypositiondetection. UnlikeHall/AMRsensors,TM